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00.511.52 0.1 1 10 100 SF30JC10 tc=150c [max] tc=150c [typ] tc= 25c [max] tc= 25c [typ] 0.2 0.5 2 5 20 50 forward voltage v f [v] forward current i f [a] pulse measurement per diode forward voltage
20 40 60 80 100 0.0001 0.001 0.01 0.1 1 10 100 SF30JC10 tc=125c [typ] tc=100c [typ] tc=75c [typ] tc=50c [typ] tc=25c [typ] tc=150c [typ] reverse voltage v r [v] reverse current i r [ma] reverse current pulse measurement per diode 0
0 5 10 15 20 25 30 35 40 0 1020304050 dc d=0.8 0.5 sin 0.3 0.2 0.1 0.05 SF30JC10 0 t p i o t d=t p /t tj = 150c forward power dissipation forward power dissipation p f [w] io [a] average rectified forward current
0 2 4 6 8 10 12 14 16 0 20406080100120 dc d=0.05 0.1 0.2 0.3 0.5 sin 0.8 SF30JC10 reverse power dissipation tj =150c 0 t p v r t d=t p /t reverse voltage v r [v] reverse power dissipation p r [w]
0 20 40 60 80 100 120 140 160 0 10 20 30 40 50 60 dc d=0.8 0.5 sin 0.3 0.2 0.1 0.05 SF30JC10 v r =50v 0 t p i o t d=t p /t 0 v r case temperature tc [c] i o [a] average rectified forward current derating curve
0 50 100 150 200 250 300 350 400 1 10 100 2 5 20 50 SF30JC10 peak surge forward capability i fsm [a] peak surge forward current number of cycles [cycle] i fsm 10ms 10ms 1 cycle non-repetitive, sine wave, tj=25c before surge current is applied
10 100 1000 0.1 1 10 100 SF30JC10 5000 2000 500 200 50 20 0.2 0.5 2 5 20 50 junction capacitance junction capacitance c j [pf] reverse voltage v r [v] f=1mhz tc=25c typ per diode

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